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Transistors
2SD2413
Silicon NPN triple diffusion planar type
For low-frequency output amplification
Unit: mm
4.50.1
s Features
q q q q q
1.60.2
1.50.1
45
3.00.15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25C)
Ratings 400 400 5 200 100 1 150 -55 ~ +150 1cm2 Unit V V V mA mA W C C
1: Base 2: Collector 3: Emitter MiniP3-F1 Package
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
Marking symbol : 1S
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = 100A, IE = 0 IC = 500A, IB = 0 IE = 100A, IC = 0 VCE = 5V, IC = 30mA IC = 50mA, IB = 5mA IC = 50mA, IB = 5mA VCB = 30V, IE = -20mA, f = 200MHz VCB = 30V, IE = 0, f = 1MHz 40 7 min 400 400 5 30 1.5 1.5 V V MHz pF typ max Unit V V V
0.4 max.
2.60.1
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
4.0+0.25 -0.20
2.50.1 3
1.0+0.1 -0.2
1 0.40.08 1.50.1 3
3 2 0.50.08
0.40.04
Publication date: August 2002
SJC00260AED
1
2SD2413
PC -- Ta
1.4
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
120 Ta=25C 100 100 30 10 3 1
VCE(sat) -- IC
IC/IB=10
Collector power dissipation PC (W)
1.2
1.0
Collector current IC (mA)
Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion.
80 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 20 0.1mA 0
0.8
60
0.6
25C 0.3
Ta=75C
40
0.4
-25C 0.1 0.03 0.01 0.1
0.2
0 0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (mA)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=10 180 VCE=5V 60
fT -- I E
VCB=30V Ta=25C
Base to emitter saturation voltage VBE(sat) (V)
150
Transition frequency fT (MHz)
30 100
30 10 3 25C 1 0.3 0.1 0.03 0.01 0.1 Ta=-25C 75C
Forward current transfer ratio hFE
50
120
40
90 25C 60 Ta=75C
30
20
30
-25C
10
0.3
1
3
10
30
100
0 0.1
0.3
1
3
10
0 -1
-3
-10
-30
-100 -300 -1000
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob -- VCB
12
Collector output capacitance Cob (pF)
10
IE=0 f=1MHz Ta=25C
8
6
4
2
0 10
30
100
300
1000
Collector to base voltage VCB (V)
2
SJC00260AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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